| In the App below, click
ON/OFF various buttons (5) to see illustrations: - Do not try to turn on more than necessary to avoid computer slow down. Best is to see one or two Applets at a time. - Check out the controls of the App. Three main ones are: GATE insulator thickness, its dielectric constant (k or epsilon), and applied GATE voltage. Fermi level and temperature can also be changed to study threshold voltage. - The Electrostatic potential applet shows how the applied GATE bias voltage is transferred into the semiconductor. Note that there is a minimum potential required for inversion to occur, which is labeled as threshold "phi." See how insulator thickness and dielectric constant can affect the efficiency of transferring GATE voltage into the semiconductor for inversion. - The Band Bending applet illustrate how the electron potential energy varies as a function of distance from GATE interface. The Fermi level is below the intrinsic level, indicating it is p-type far away from GATE. WIth sufficient amgnitude, the electrostatic potential bends the bands such that the The Fermi level is above the intrinsic near GATE, making the region n-type. - Note the two applets above are NOT plotted on the same length scale, in order to illustrate different details. - Use both carrier density plots on linear and log scale to study threshold electrostatic potential, depletion and inversion. |
| APP |