| In the App below, click
ON/OFF various buttons (5) to see illustrations: - Do not try to turn on more than necessary to avoid computer slow down. Best is to see one or two Applets at a time. - Check out the controls of the App. Three main ones are: GATE insulator thickness, its dielectric constant (k or epsilon), and applied GATE voltage. Fermi level and temperature can also be changed to study threshold voltage. - The 3D App is only for the illustration purpose to visualize the two main directions in a FET: a direcction perpendicular to GATE and the channel along the applied electrostatic field, and a direction parallel to GATE between SOURCE and DRAIN, which is the conduit of the transistor. - The particle simulation applet can be quite slow and should be run alone. - Use both carrier density plots on linear and log scale to study depletion and inversion. - Use the 2D MOSFET illustration applet to visualize how the holes (majority carriers) are repelled by the field to create a depletion and then an electron channel. In order to illustrate sufficient details, the drawing is NOT proportional among various dimensions and regions. |
| APP |