Laboratory
Laboratory I - Oxidation Process, C-V Measurements MOS Capacitors using LabView and Ellipsometry
Laboratory II - RTP: Dopant Diffusion; Crystallographic and Metal Induced Defects in Si. See pictures of etched 3D IC structures and defects,
erfc plots for n-type dopingLaboratory III - Lithography. See pictures of test structures and alignment marks
Nomarski Contrast in Optical Microscopy
Test structure ST700 (relevant to Lab II and III)
Pictures for Lab II and Lab III
Laboratory IV - Silvaco Three Simulations in this course (please check the schedule)
Lab reports are due in two weeks from the time of the experiments